一。 硬件連接

二。 LCD&lcddev結(jié)構(gòu)體

LCD結(jié)構(gòu)體在LCD.h中定義

訪問LCD_REG，地址就是0x6C000000|0x000007FE，此時RS= 0，發(fā)送命令

訪問完LCD_REG后，結(jié)構(gòu)體指針自動加1，訪問LCD_RAM，內(nèi)部地址相應(yīng)加2，此時RS= 1，發(fā)送數(shù)據(jù)

lcd_dev結(jié)構(gòu)體介紹：

width和height為LCD的寬度和高度。

id為LCD的ID，比如9341等。

dir為LCD是豎屏還是橫屏的標(biāo)志，0為豎屏，1為橫屏。

wramcmd為開始寫gram指令。

setxcm為設(shè)置x坐標(biāo)指令。

setycmd為設(shè)置y坐標(biāo)指令。

例：對于id = 0x9341的LCD

//設(shè)置LCD顯示方向函數(shù)這個函數(shù)會在LCD初始化的最后進(jìn)行調(diào)用。

//dir = 0,豎屏,dir = 1,橫屏

void LCD_Display_Dir(u8 dir)

{

if (dir == 0) //豎屏

{

lcddev.dir = 0; //豎屏

lcddev.width = 240;

lcddev.height = 320;

lcddev.wramcmd = 0x2C;

lcddev.setxcmd = 0x2A;

lcddev.setycmd = 0x2B;

}

else //橫屏

{

lcddev.dir = 1; //橫屏

lcddev.width = 320;

lcddev.height = 240;

lcddev.wramcmd = 0x2C;

lcddev.setxcmd = 0x2A;

lcddev.setycmd = 0x2B;

}

}

三。 底層接口函數(shù)

寫寄存器內(nèi)容函數(shù)是寫寄存器值函數(shù)+寫數(shù)據(jù)函數(shù)

//寫寄存器函數(shù)

//regval:寄存器值 RS= 0

void LCD_WR_REG(u16 regval)

{

LCD->LCD_REG=regval; //寫入要寫的寄存器序號

}

//寫 LCD 數(shù)據(jù)函數(shù) RS= 1

//data:要寫入的值

void LCD_WR_DATA(u16 data)

{

LCD->LCD_RAM=data;

}

//讀 LCD 數(shù)據(jù)函數(shù)

//返回值:讀到的值

u16 LCD_RD_DATA(void)

{

return LCD->LCD_RAM;

}

//寫寄存器函數(shù)

//LCD_Reg:寄存器地址

//LCD_RegValue:要寫入的數(shù)據(jù)

void LCD_WriteReg(u8 LCD_Reg, u16 LCD_RegValue)

{ LCD->LCD_REG = LCD_Reg; //寫入要寫的寄存器序號

LCD->LCD_RAM = LCD_RegValue; //寫入數(shù)據(jù)

}

//讀寄存器函數(shù)

//LCD_Reg:寄存器地址

//返回值:讀到的數(shù)據(jù)

u16 LCD_ReadReg(u8 LCD_Reg)

{ LCD_WR_REG(LCD_Reg); //寫入要讀的寄存器序號

delay_us(5);

return LCD_RD_DATA(); //返回讀到的值

}

//開始寫 GRAM函數(shù)

void LCD_WriteRAM_Prepare(void)

{

LCD->LCD_REG=lcddev.wramcmd;

}

//LCD寫GRAM

//RGB_Code:顏色值

void LCD_WriteRAM(u16 RGB_Code)

{

LCD->LCD_RAM = RGB_Code;//寫十六位GRAM

}

四。 初始化函數(shù)

FSMC設(shè)置：

readWriteTiming.FSMC_AddressSetupTime = 0x01; //地址建立時間（ADDSET）為2個HCLK 1/36M=27ns

readWriteTiming.FSMC_AddressHoldTime = 0x00; //地址保持時間（ADDHLD）模式A未用到

readWriteTiming.FSMC_DataSetupTime = 0x0f; // 數(shù)據(jù)保存時間為16個HCLK,因為液晶驅(qū)動IC的 讀數(shù)據(jù)的時候，速度不能太快，尤其對1289這個IC。

readWriteTiming.FSMC_BusTurnAroundDuration = 0x00;

readWriteTiming.FSMC_CLKDivision = 0x00;

readWriteTiming.FSMC_DataLatency = 0x00;

readWriteTiming.FSMC_AccessMode = FSMC_AccessMode_A; //模式A

writeTiming.FSMC_AddressSetupTime = 0x00; //地址建立時間（ADDSET）為1個HCLK

writeTiming.FSMC_AddressHoldTime = 0x00; //地址保持時間（A

writeTiming.FSMC_DataSetupTime = 0x03; ////數(shù)據(jù)保存時間為4個HCLK

writeTiming.FSMC_BusTurnAroundDuration = 0x00;

writeTiming.FSMC_CLKDivision = 0x00;

writeTiming.FSMC_DataLatency = 0x00;

writeTiming.FSMC_AccessMode = FSMC_AccessMode_A; //模式A

FSMC_NORSRAMInitStructure.FSMC_Bank = FSMC_Bank1_NORSRAM4;// 這里我們使用NE4 ，也就對應(yīng) BTCR[6],[7]。

FSMC_NORSRAMInitStructure.FSMC_DataAddressMux = FSMC_DataAddressMux_Disable; // 不復(fù)用數(shù) 據(jù)地址

FSMC_NORSRAMInitStructure.FSMC_MemoryType =FSMC_MemoryType_SRAM;// FSMC_MemoryType_SRAM; //SRAM

FSMC_NORSRAMInitStructure.FSMC_MemoryDataWidth = FSMC_MemoryDataWidth_16b;//存儲器數(shù)據(jù) 寬度為16bit

FSMC_NORSRAMInitStructure.FSMC_BurstAccessMode =FSMC_BurstAccessMode_Disable;// FSMC_BurstAccessMode_Disable;

FSMC_NORSRAMInitStructure.FSMC_WaitSignalPolarity = FSMC_WaitSignalPolarity_Low;

FSMC_NORSRAMInitStructure.FSMC_AsynchronousWait=FSMC_AsynchronousWait_Disable;

FSMC_NORSRAMInitStructure.FSMC_WrapMode = FSMC_WrapMode_Disable;

FSMC_NORSRAMInitStructure.FSMC_WaitSignalActive = FSMC_WaitSignalActive_BeforeWaitState;

FSMC_NORSRAMInitStructure.FSMC_WriteOperation = FSMC_WriteOperation_Enable; // 存儲器寫 使能